250W MasterGaN reference design fast-tracks compact, efficient industrial power supplies

250W MasterGaN參考設計快速跟蹤緊湊、高效的工業(yè)電源

Accelerating the design of gallium-nitride (GaN) power supplies (PSUs) that deliver superior efficiency and power density, STMicroelectronics has launched the EVL250WMG1L resonant-converter reference design based on the MasterGaN1L System-in-Package (SiP).

為提供卓越的效率和功率密度，意法半導體加快了氮化鎵 (GaN) 電源 (PSU) 的設計進程，推出了基于MasterGaN1L系統(tǒng)級封裝 (SiP) 的EVL250WMG1L諧振轉換器參考設計。

ST’s MasterGaN SiPs combine GaN power transistors with gate drivers specially optimized to ensure fast and perfectly controlled switching. Using these SiPs in place of an equivalent network of discrete components helps maximize performance and reliability while also accelerating design and saving PCB space.

意法半導體的MasterGaN-SiPs將GaN功率晶體管與經(jīng)特殊優(yōu)化的柵極驅(qū)動器相結合，以確保開關快速且受控。使用此類SiP代替分立器件的等效網(wǎng)絡有助于增強性能和可靠性，同時加速設計并節(jié)省PCB空間。

The new reference design targets industrial applications where space is limited and efficiency is critical. Combining the MasterGaN1L, which contains two 650V 150m? GaN FETs, with ST’s L6599A resonant controller, the PSU achieves peak efficiency over 94% and operates without heatsinks on the primary side. Also leveraging ST’s SRK2001A synchronous-rectification controller, the unit has a compact overall footprint of 80mm x 50mm and outstanding power density of 34 Watts per cubic inch (W/inch^3).

全新的參考設計針對的是空間有限但效率至關重要的工業(yè)應用。結合MasterGaN1L（含兩個650V 150m GaN-FET，采用意法半導體的L6599A諧振控制器），PSU的峰值效率超過94%，且能在初級側無散熱器的情況下運行。該裝置還利用了意法半導體的SRK2001A同步整流控制器，80mm x 50mm的整體尺寸十分緊湊，功率密度高達34 W/inch^3。

The PSU can deliver up to 10A output current, equivalent to 250W at 24Vdc, while also having standby current consumption below 1μA for excellent energy saving. Protection features built into the L6599A and SRK2001A ensure resilience against overcurrent, short-circuit and overvoltage, while input-voltage monitoring ensures correct startup and provides under-voltage lockout.

PSU可提供高達10A的輸出電流，相當于24Vdc下的250W，同時待機電流消耗低于1μA，擁有出色的節(jié)能效果。L6599A和SRK2001A內(nèi)置的保護功能可確保對過電流、短路和過電壓的彈性保護，而輸入電壓監(jiān)測則可確保啟動正確并提供欠壓鎖定功能。

Key features

關鍵特性

High efficiency and compact solution for DC-DC conversion using MasterGaN1L

緊湊的高效率解決方案，面向使用MasterGaN1L轉換

Output voltage: 24 V

輸出電壓：24 V

Output power: up to 250 W

輸出功率：高達250 W

Nominal input voltage: 400 V +/- 10%

標稱輸入電壓：400 V +/- 10%

Efficiency: > 92%

效率：> 92%

Outputs protected against short-circuit and overcurrent

輸出具有短路和過電流保護

Input voltage monitor for correct sequencing as D2D converter, and brown-out protection

輸入電壓監(jiān)控用于管理正確的D2D轉換器序列，并具有欠壓保護功能

Board size: 80 x 50 (W x H) mm. Maximum components height: 30 mm

板子尺寸：80 x 50 (W x H) mm。最大組件高度：30 mm

WEEE and RoHS compliant

符合WEEE和RoHS標準

The EVL250WMG1L is available now, fully built and ready for evaluation, for $250.00. Comprehensive related documentation is published on the product page to help system designers accelerate their GaN power projects.

EVL250WMG1L現(xiàn)已上市，整套預裝系統(tǒng)可直接進行測試驗證，每件售價250.00美元。產(chǎn)品頁面上發(fā)布了全面的相關文檔，以幫助系統(tǒng)設計者加快GaN電源項目。