法國研究機(jī)構(gòu)CEA-Leti最近開始提升其三維芯片封裝的生產(chǎn)能力,CEA-Leti在Grenoble 有一條300 mm 的CMOS 研發(fā)型生產(chǎn)線,目前專門用于三維芯片封裝的試驗(yàn)。
CEA-Leti 稱他們已經(jīng)可以向客戶提供 200 和 300 mm 晶圓的多種封裝技術(shù)和工具,其中包括三維定向光刻、深度刻蝕、介質(zhì)淀積、表面金屬化等。
CEA-Leti ramps up 300-mm 3-D fab
Peter Clarke
France's CEA-Leti research center in Grenoble has begun to ramp up production on its 300-mm wafer fabrication facility dedicated to 3D-integration applications.
By adding this technology to its existing 300-mm CMOS R&D line, Leti now can offer heterogeneous integration technologies to customers on both 200- and 300-mm diameter wafers.
The line is dedicated to R&D and prototyping and can provide 3-D oriented lithography, deep etching, dielectric deposition, metallization, wet etching and packaging tools that will be available for Leti's partner and customers.
Leti claims to have a large portfolio of through-silicon vias (TSVs) as well as capabilities in alignment, bonding, thinning, and interconnects in specific integration schemes for manufacturing optimized die stacks.
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